A Poisson C-V profiler
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31956/01485893.pdf?arnumber=1485893
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Accurate doping profile extraction for predictive SPAD design;Emerging Imaging and Sensing Technologies for Security and Defence VIII;2023-10-17
2. Novel low-temperature C-V technique for MOS doping profile determination near the Si/SiO/sub 2/ interface;IEEE Transactions on Electron Devices;2001-04
3. Carrier quantization at flat bands in MOS devices;IEEE Transactions on Electron Devices;1999
4. Application of a genetic algorithm to doping profile identification;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-01
5. A non-destructive method to determine impurity-profiles in non-abrupt p-n junctions with deep levels;Solid-State Electronics;1992-12
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