Modeling and characterization for high-speed GaAlAs-GaAs n-p-n heterojunction bipolar transistors
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31901/01483837.pdf?arnumber=1483837
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3. Numerical studies of large-signal power characteristics of AlGaAs/GaAs heterojunction bipolar transistors;Microelectronics Journal;1995-09
4. Accurate parameter extraction of heterojunctions based on inverse C-V simulation;Solid-State Electronics;1995-06
5. Regional Monte Carlo modeling of electron transport and transit-time estimation in graded-base HBT's;IEEE Transactions on Electron Devices;1994-04
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