VB-6 Charge-based large-signal modeling of thin-film SOI MOSFET's-Reference-Cited by-同舟云学术

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VB-6 Charge-based large-signal modeling of thin-film SOI MOSFET's

Published:1984-12 Issue:12 Volume:31 Page:1983-1983
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lim H.K.,Fossum J.G.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31909/01484167.pdf?arnumber=1484167

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Highly sensitive ion-sensitive field-effect transistor sensor using fully transparent amorphous In–Ga–Zn–O thin-film transistors;Semiconductor Science and Technology;2017-01-30

2. A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel;Chinese Physics B;2012-04

3. Improved current drivability with back-gate bias for elevated source and drain structured FD-SOI SiGe MOSFET;Microelectronic Engineering;2009-11

4. Two dimensional simulation and analytical modeling of a novel ISE MOSFET with gate stack configuration;Microelectronic Engineering;2009-10

5. Method for extraction of parameter characterising [micro sign]eff against Eeff curves in FD-SOI Si MOS devices;Electronics Letters;2009

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