IIA-5 Pulse-doped AlGaAs/InGaAs pseudomorphic MODFET's-Reference-Cited by-同舟云学术

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IIA-5 Pulse-doped AlGaAs/InGaAs pseudomorphic MODFET's

Published:1987-11 Issue:11 Volume:34 Page:2357-2358
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Moll N.,Fischer-Colbrie A.,Hueschen M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31983/01486960.pdf?arnumber=1486960

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modulation Doped FETs;Encyclopedia of RF and Microwave Engineering;2005-04-15

2. A study on photoreflectance characteristics of interface effect in Si delta-doped Al0.24Ga0.76As/In0.2Ga0.8As/GaAs pseudomorphic high electron mobility transistor structures;Physica E: Low-dimensional Systems and Nanostructures;2004-10

3. Modulation Doped Fets;Wiley Encyclopedia of Electrical and Electronics Engineering;1999-12-27

4. Pseudomorphic InGaAs high electron mobility transistors;Thin Solid Films;1993-08

5. Strained layer heterostructures, and their applications to MODFETs, HBTs, and lasers;Proceedings of the IEEE;1993-04

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