Two-dimensional computer simulation models for MOSLSI fabrication processes-Reference-Cited by-同舟云学术

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Two-dimensional computer simulation models for MOSLSI fabrication processes

Published:1981-05 Issue:5 Volume:28 Page:574-580
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Taniguchi K.,Kashiwagi M.,Iwai H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31827/01481537.pdf?arnumber=1481537

Cited by 40 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Strain determination in silicon microstructures by combined convergent beam electron diffraction, process simulation, and micro-Raman spectroscopy;Journal of Applied Physics;2003-11

2. TEPS: Two-dimensional Etching Process Simulator;IETE Journal of Research;1995-05

3. Efficient method for numerical modeling of thermal redistribution of interacting impurities under oxidizing ambient;Solid-State Electronics;1992-10

4. AN EFFICIENT DIFFUSION ALGORITHM FOR 2‐D VLSI PROCESS MODELING CODE;COMPEL - The international journal for computation and mathematics in electrical and electronic engineering;1990-04

5. A transient analytical model for predicting the redistribution of injected interstitials;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;1990

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