Modeling of narrow-base bipolar transistors including variable-base-charge and avalanche effects-Reference-Cited by-同舟云学术

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Modeling of narrow-base bipolar transistors including variable-base-charge and avalanche effects

Published:1987-11 Issue:11 Volume:34 Page:2323-2328
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Hebert F.,Roulston D.J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31983/01486950.pdf?arnumber=1486950

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modelling of the avalanche current including the non-local effect;International Journal of Electronics;1998-10

2. Laser pulser for a time-of-flight laser radar;Review of Scientific Instruments;1997-06

3. SPICE modelling of impact ionisation effects in silicon bipolar transistors;IEE Proceedings - Circuits, Devices and Systems;1996

4. Influence of impact-ionization-induced base current reversal on bipolar transistor parameters;IEEE Transactions on Electron Devices;1995

5. Base current reversal in bipolar transistors and circuits: a review and update;IEE Proceedings - Circuits, Devices and Systems;1994

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