Monolithic integration of a planar embedded InGaAs p-i-n detector with InP depletion-mode FET's-Reference-Cited by-同舟云学术

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Monolithic integration of a planar embedded InGaAs p-i-n detector with InP depletion-mode FET's

Published:1985-11 Issue:11 Volume:32 Page:2319-2321
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Tell B.,Liao A.S.H.,Brown-Goebeler K.F.,Bridges T.J.,Burkhardt G.,Chang T.Y.,Bergano N.S.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31933/01485023.pdf?arnumber=1485023

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5. Narrow-gate In/sub 0.53/Ga/sub 0.47/As junction field-effect transistors as tunable resistors for long-wavelength integrated optical receivers;IEEE Transactions on Electron Devices;1990

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