Parasitic MESFET in (Al, Ga) As/GaAs modulation doped FET's and MODFET characterization-Reference-Cited by-同舟云学术

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Parasitic MESFET in (Al, Ga) As/GaAs modulation doped FET's and MODFET characterization

Published:1984-01 Issue:1 Volume:31 Page:29-35
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kwyro Lee ,Shur M.S.,Drummond T.J.,Morkoc H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31898/01483755.pdf?arnumber=1483755

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A study of DC and RF transconductance for different technologies of HEMT at low and high temperatures;Journal of Materials Science: Materials in Electronics;2023-04

2. Depletion- and Enhancement-Mode p-Channel MISHFET Based on GaN/AlGaN Single Heterostructures on Sapphire Substrates;IEEE Journal of the Electron Devices Society;2023

3. Study of Different Transport Properties of MgZnO/ZnO and AlGaN/GaN High Electron Mobility Transistors: A Review;HEMT Technology and Applications;2022-06-24

4. GaN and GaAs HEMT Channel Current Model for Nonlinear Microwave and RF Applications;2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2021-12-05

5. Impact of the self-generated heat on the scalability of HEMTs;Microelectronic Engineering;2005-10

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