Observation and analysis of negative resistance in the forward I-V characteristics of dielectrically isolated high-voltage gated diode switches
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31954/01485830.pdf?arnumber=1485830
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A silicon thermal astable multivibrator for flow and temperature sensing;IEEE Transactions on Electron Devices;2002-12
2. A dual-gate shorted-anode silicon-on-insulator lateral insulated gate bipolar transistor with floating ohmic contact for suppressing snapback and fast switching characteristics;Microelectronics Journal;1999-06
3. Current-controlled negative resistance (CCNR) in SiC P-i-N rectifiers;IEEE Transactions on Electron Devices;1999-03
4. Dual-Gate Shorted Anode SOI Lateral Insulated Gate Bipolar Transistor Suppressing the Snap-Back;Japanese Journal of Applied Physics;1997-03-30
5. Analysis of negative differential resistance in the I-V characteristics of shorted-anode LIGBT's;IEEE Transactions on Electron Devices;1991-07
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