Modeling of Annular Gate MOS Transistors
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9328647/9328648/09328697.pdf?arnumber=9328697
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1. A new SPICE modeling approach of annular MOSFET in 350 nm commercial CMOS process;2023 3rd International Conference on Electronic Information Engineering and Computer (EIECT);2023-11-17
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3. Novel Void Embedded Design for Total Ionizing Dose Hardening of Silicon-on-Insulator MOSFET;IEEE Electron Device Letters;2022-11
4. Total Ionizing Dose Tolerance Estimation for an All-MOS Temperature-Insensitive Voltage Divider;2022 Moscow Workshop on Electronic and Networking Technologies (MWENT);2022-06-09
5. Table of Contents;IEEE Microwave Magazine;2022-03
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