Parametric Dependency of Charge Transport in a Carbon Nanotube-Based Field Effect Transistor: A Numerical Simulation-Reference-Cited by-同舟云学术

Parametric Dependency of Charge Transport in a Carbon Nanotube-Based Field Effect Transistor: A Numerical Simulation

Published:2023-04-07 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 8th International Conference for Convergence in Technology (I2CT)
language:
Short-container-title:

Author:

Ameen Shaeekul¹,Farhan Md. Sayed¹,Wahid Tanvir¹,Nayan Md. Faysal¹

Affiliation:

1. Ahsanullah University of Science and Technology,Department of Electrical and Electronic Engineering,Dhaka,Bangladesh,1208

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10126131/10126116/10126173.pdf?arnumber=10126173

Reference24 articles.

1. Drain Current Characteristics of Carbon-nanotube FET (CNTFET) with 𝑺𝒊𝑶𝟐,Zr𝑶𝟐 and Hf𝑶𝟐 as Dielectric Materials using FETToy Code

2. Nanotube Diameter Effect on the CNTFET Performance;djamil rechem;5th International Conference Sciences of Electronic Technologies of Information and Telecommunications,0

3. Performance Analysis of Nanoscale Carbon Nanotube Field Effect Transistor considering the Impacts of Temperature and Gate Dielectrics

4. Novel attributes in scaling issues of carbon nanotube field-effect transistors

5. Impacts of high-k gate dielectrics and low temperature on the performance of nanoscale CNTFETs

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantum Insights into Dielectric Materials and Oxide Thickness-Dependent Conductance in Single-Walled CNTFET: A Parametric Simulation Study;2024 International Conference on Advances in Computing, Communication, Electrical, and Smart Systems (iCACCESS);2024-03-08

2. Stochastic Performance of CNTFET with High ‘k’ Dielectric Material Over Conventional Silicon Devices in Optimization of Drain Current;Lecture Notes in Electrical Engineering;2024