Integration of optical devices based on Si, Ge and SiOx
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/5623516/5643317/05643430.pdf?arnumber=5643430
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Seed/Catalyst-Free Growth of Gallium-Based Compound Materials on Graphene on Insulator by Electrochemical Deposition at Room Temperature;Nanoscale Research Letters;2015-05-27
2. The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100);Materials;2014-02-24
3. RF-to-DC Characteristics of Direct Irradiated On-Chip Gallium Arsenide Schottky Diode and Antenna for Application in Proximity Communication System;Sensors;2014-02-20
4. Crystallization of Electrodeposited Germanium Thin Film on Silicon (100);Materials;2013-11-06
5. Epitaxial-Template Structure Utilizing Ge-on-Insulator Stripe Arrays with Nanospacing for Advanced Heterogeneous Integration on Si Platform;Japanese Journal of Applied Physics;2012-06-20
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