GaN/InGaN Heterojunction Bipolar Transistors With $f_{T} > \hbox{5}\ \hbox{GHz}$-Reference-Cited by-同舟云学术

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GaN/InGaN Heterojunction Bipolar Transistors With $f_{T} > \hbox{5}\ \hbox{GHz}$

Published:2011-08 Issue:8 Volume:32 Page:1065-1067
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Shen Shyh-Chiang,Dupuis Russell D.,Lee Yi-Che,Kim Hee-Jin,Zhang Yun,Lochner Zachary,Yoder P. Douglas,Ryou Jae-Hyun

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5961166/05898388.pdf?arnumber=5898388

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. “Regrowth-free” fabrication of high-current-gain AlGaN/GaN heterojunction bipolar transistor with N-p-n configuration;Applied Physics Express;2022-04-01

2. Characteristics of Blue GaN/InGaN Quantum-Well Light-Emitting Transistor;IEEE Electron Device Letters;2020-01

3. AlGaN/GaN Heterojunction Bipolar Transistor With Selective-Area Grown Emitter and Improved Base Contact;IEEE Transactions on Electron Devices;2019-03

4. Radiative recombination in GaN/InGaN heterojunction bipolar transistors;Applied Physics Letters;2015-12-14

5. III-N High-Power Bipolar Transistors;ECS Transactions;2013-08-31

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