A D-Band Cascode Amplifier With 24.3 dB Gain and 7.7 dBm Output Power in 0.13 $\mu$m SiGe BiCMOS Technology

Author:

Hou Debin,Xiong Yong-Zhong,Goh Wang-Ling,Hong Wei,Madihian Mohammad

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 27 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. The Full D-Band InP HEMT Low Noise Amplifiers MMIC with 2.7dB Noise Factor;2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2023-11-13

2. Meta-Sticker: Sub-Terahertz Metamaterial Stickers for Non-Invasive Mobile Food Sensing;Proceedings of the 21st ACM Conference on Embedded Networked Sensor Systems;2023-11-12

3. A 33∼170 GHz cascode amplifier based on InP DHBT technology;J INFRARED MILLIM W;2023

4. Broadband Monolithic GaN Balanced Amplifier Composed of Mixed Cascade-Tandem Directional Couplers and Cascode Stages;IEEE Access;2023

5. A Study of Collaborative Gain/Noise Optimization for LNAs at Near- Frequencies Based on a Novel Gain-Noise Plane Approach ;IEEE Transactions on Circuits and Systems II: Express Briefs;2023-01

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