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A Novel 2.6–6.4 GHz Highly Integrated Broadband GaN Power Amplifier

  • Published:2018-01 Issue:1 Volume:28 Page:37-39
  • ISSN:1531-1309
  • Container-title:IEEE Microwave and Wireless Components Letters
  • language:
  • Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Liu BeiORCID,Mao Mengda,Khanna Devrishi,Boon Chirn-ChyeORCID,Choi PilsoonORCID,Fitzgerald Eugene A.ORCID

Funder

National Research Foundation, Prime Minister’s Office, Singapore, through its Campus for Research Excellence and Technological Enterprise Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Broadband PA With Complementary Matching to Get High Impedance Transformation Ratio of 125 With 60% Bandwidth on Two-Layer HBT Process;IEEE Microwave and Wireless Technology Letters;2024-06

2. 2-6GHz 30W GaN Power Amplifier Using Reactive Matching Technique;2023 8th International Conference on Integrated Circuits and Microsystems (ICICM);2023-10-20

3. Novel Wideband Fully Integrated GaN Power Amplifier Design Using a Hybrid Bandpass-Lowpass Output Matching Network;IEEE Microwave and Wireless Technology Letters;2023-08

4. A 2-6 GHz High Efficiency Power Amplifier Design for Communication Systems;2023 31st Signal Processing and Communications Applications Conference (SIU);2023-07-05

5. S-Band GaN based Power Amplifier with Symmetric Matching Network;2022 IEEE 9th Uttar Pradesh Section International Conference on Electrical, Electronics and Computer Engineering (UPCON);2022-12-02
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