A 17.5–26 GHz Low-Noise Amplifier With Over 8 kV ESD Protection in 65 nm CMOS

Author:

Tsai Ming-Hsien,Hsu Shawn S. H.,Hsueh Fu-Lung,Jou Chewn-Pu,Yeh Tzu-Jin

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A 18–33 GHz CMOS LNA with 26.7 dB peak gain and 2.8 dB minimum NF for K/Ka-band applications;AEU - International Journal of Electronics and Communications;2024-04

2. A 6-18 GHz Low Group Delay Variation Amplifier With Inductive ESD Protection for Phased-Arrays;2023 8th International Conference on Integrated Circuits and Microsystems (ICICM);2023-10-20

3. A Ku-band LNA with 39.2 dB gain, 1.4 dB NF and shunt inductor-based matching network;Engineering Research Express;2023-09-01

4. Realization of Gm Enhancement Current Reuse LNA for High Frequency Applications;2023 14th International Conference on Computing Communication and Networking Technologies (ICCCNT);2023-07-06

5. Design of K-band Compact Wideband Low Noise Amplifier;2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT);2023-05-14

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