Power Measurement Setup for On-Wafer Large Signal Characterization Up to Q-Band-Reference-Cited by-同舟云学术

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Power Measurement Setup for On-Wafer Large Signal Characterization Up to Q-Band

Published:2017-04 Issue:4 Volume:27 Page:419-421
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Kabouche R.,Okada E.,Dogmus E.,Linge A.,Zegaoui M.,Medjdoub F.^ORCID

Funder

French RENATECH network and the French Defense Procurement Agency (DGA)

ANR Project CROCUS

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx7/7260/7893809/07884981.pdf?arnumber=7884981

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physical insight of thin AlGaN back barrier for millimeter-wave high voltage AlN/GaN on SiC HEMTs;Applied Physics Letters;2023-10-02

2. On-wafer RF high-power measurement with an LSMO load at 40 GHz;2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz);2023-09-17

3. Low Trapping Effects and High Blocking Voltage in Sub-Micron-Thick AlN/GaN Millimeter-Wave Transistors Grown by MBE on Silicon Substrate;Electronics;2023-07-06

4. Low-Profile circularly polarized substrate integrated array antenna;Ferroelectrics;2023-06-11

5. Submicrometer‐Thick Step‐Graded AlGaN Buffer on Silicon with a High‐Buffer Breakdown Field;physica status solidi (a);2023-05-09

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