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A Fully Integrated High Efficiency RF Power Amplifier for WLAN Application in 40 nm Standard CMOS Process

  • Published:2015-06 Issue:6 Volume:25 Page:382-384
  • ISSN:1531-1309
  • Container-title:IEEE Microwave and Wireless Components Letters
  • language:
  • Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Ryu Namsik,Park Bonghyuk,Jeong Yongchae

Funder

The Cross-Ministry Giga KOREA Project of the Ministry of Science ICT and Future Planning South Korea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Dual-Mode CMOS Power Amplifier with an External Power Amplifier Driver Using 40 nm CMOS for Narrowband Internet-of-Things Applications;Nanomaterials;2024-01-25

2. A Triple-Band Radio for WLAN 11b/g/n/ax in 45nm CMOS;2023 IEEE Asian Solid-State Circuits Conference (A-SSCC);2023-11-05

3. DC-10 GHz broadband linear power amplifier for 5G applications using 180 nm CMOS technology;AEU - International Journal of Electronics and Communications;2023-02

4. 900 MHz Differential Power Amplifier IC Using 55 nm CMOS Technology;2022 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT);2022-08-29

5. Design of 2.45 GHz CMOS Power Amplifier with Improved Linearity Using Self-Body-Biasing of Common-Source Transistors;The Journal of Korean Institute of Electromagnetic Engineering and Science;2022-03
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