A $Ka$ -Band Variable-Gain Amplifier With Low OP1dB Variation for 5G Applications
Author:
Funder
Samsung
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Link
http://xplorestaging.ieee.org/ielx7/7260/8892685/08847625.pdf?arnumber=8847625
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A 23–44-GHz Broadband CG-Gilbert Gm-Boosted PS-VGA for 5G Application;IEEE Microwave and Wireless Technology Letters;2023-11
2. 5.85-mW 3.1–23.7-GHz Two-Stage CMOS VGA With 2.53-dB NF Using Concurrent Current Steering;IEEE Microwave and Wireless Components Letters;2022-11
3. A 39-GHz Phase-Inverting Variable Gain Power Amplifier in 65-nm CMOS for 5G Communication;IEEE Microwave and Wireless Components Letters;2022-11
4. 7.4-mW, 22.7–29.7 GHz CMOS VGA With 23.7 dB (19.2 to −4.5 dB) Gain Tuning Range and 3.26 dB NFavg;IEEE Microwave and Wireless Components Letters;2022-09
5. A Variable Gain Power Amplifier Based on Switched-Capacitor Array With Stable Linearity;IEEE Transactions on Circuits and Systems II: Express Briefs;2022-02
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