A Low-Noise 150–210 GHz Detector in 45 nm CMOS SOI

Author:

Uzunkol Mehmet,Rebeiz Gabriel M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A 180-GHz High-Sensitivity Dielectric Resonator Antenna-Coupled Detector in 16nm FinFET;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

2. A D-Band Swing Boosting Power Detector With 25-KV/W Intrinsic Responsivity and 2.1-pW/Hz⁰.⁵ NEP in 22-nm CMOS FDSOI;IEEE Microwave and Wireless Technology Letters;2024-05

3. Gain Improvement in 4T Structure Detectors using Cascode Configured Pixels;2024 32nd Southern African Universities Power Engineering Conference (SAUPEC);2024-01-24

4. A Broadband D-Band Power Detector System in SiGe 130 nm BiCMOS Technology;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

5. Design of on‐chip antennas for THz detector and source in CMOS (Invited paper);IET Microwaves, Antennas & Propagation;2023-04-24

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