Cryogenic Operation of a Millimeter-Wave SiGe BiCMOS Low-Noise Amplifier
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Link
http://xplorestaging.ieee.org/ielx7/7260/8731796/08708938.pdf?arnumber=8708938
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Broadband electromagnetic induction transparent and absorptive dual-function metastructure with vanadium dioxide doping;Optics & Laser Technology;2024-12
2. A Cryogenic 561 μW Ultralow-Power 56–62 GHz Low Noise Amplifier in 130-nm SiGe HBTs;IEEE Microwave and Wireless Technology Letters;2024-01
3. Cryogenic Operation of Enhancement-Mode GaN HEMTs;2023 IEEE Workshop on Power Electronics for Aerospace Applications (PEASA);2023-07-18
4. Radiation response of SiGe low noise amplifier irradiated with different energy protons;Microelectronics Reliability;2021-12
5. Wideband cryogenic amplifier for a superconducting nanowire single-photon detector;Frontiers of Information Technology & Electronic Engineering;2021-12
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