A Low-Loss and High Isolation D-Band SPDT Switch Utilizing Deep-Saturated SiGe HBTs-Reference-Cited by-同舟云学术

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A Low-Loss and High Isolation D-Band SPDT Switch Utilizing Deep-Saturated SiGe HBTs

Published:2014-06 Issue:6 Volume:24 Page:400-402
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Ulusoy A. Cagri,Song Peter,Schmid Robert L.,Khan Wasif T.,Kaynak Mehmet,Tillack Bernd,Papapolymerou John,Cressler John D.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx7/7260/6824877/06809229.pdf?arnumber=6809229

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4. A W-Band High Isolation SPDT Switch Using Reverse-saturated 0.13μm SiGe HBTs;2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT);2023-05-14

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