A 1.0 V, 10–22 GHz, 4 mW LNA Utilizing Weakly Saturated SiGe HBTs for Single-Chip, Low-Power, Remote Sensing Applications-Reference-Cited by-同舟云学术

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A 1.0 V, 10–22 GHz, 4 mW LNA Utilizing Weakly Saturated SiGe HBTs for Single-Chip, Low-Power, Remote Sensing Applications

Published:2014-12 Issue:12 Volume:24 Page:890-892
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Inanlou Farzad,Coen Christopher T.,Cressler John D.

Funder

Georgia Institute of Technology President's Fellowship

AFRL

Jazz Semiconductor

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx7/7260/6950518/06932500.pdf?arnumber=6932500

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Ku-Band Fully Differential Current-Reuse Stacked Low-Noise Amplifier in 0.18-μm SiGe BiCMOS Technology;IEEE Microwave and Wireless Technology Letters;2024-04

2. A Ku-Band Filtering LNA with Flat Gain and High Linearity;2023 International Applied Computational Electromagnetics Society Symposium (ACES-China);2023-08-15

3. Ultralow-Power W-Band Low-Noise Amplifier Design in 130-nm SiGe BiCMOS;IEEE Microwave and Wireless Technology Letters;2023-08

4. Wideband SiGe-HBT Low-Noise Amplifier with Resistive Feedback and Shunt Peaking;Sensors;2023-07-28

5. A compact 9–23 GHz low noise amplifier with bandwidth extension techniques in 0.18‐μm SiGe BiCMOS;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-06-02

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