A Ka-Band Quasi-F-1 Power Amplifier in a 130 nm SiGe BiCMOS Technology
Author:
Affiliation:
1. National Technical University of Athens,School of Electrical and Computer Engineering,Athens,Greece
Funder
Infineon Technologies
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9976315/9976316/09976366.pdf?arnumber=9976366
Reference12 articles.
1. A 28 GHz and 38 GHz High-Gain Dual-Band LNA for 5G Wireless Systems in 22nm FD-SOI CMOS;xu;Proc of European Microwave Integrated Circuits Conference,2021
2. A Highly Efficient Broadband mm-Wave 24-32.5 GHz SiGe PA for Potential 5G Applications
3. A 43% PAE inverse Class-F power amplifier at 39–42 GHz with a λ/4-transformer based harmonic filter in 0.13-µm SiGe BiCMOS
4. A 25–35 GHz Neutralized Continuous Class-F CMOS Power Amplifier for 5G Mobile Communications Achieving 26% Modulation PAE at 1.5 Gb/s and 46.4% Peak PAE
5. A 38-GHz Millimeter-Wave Double-Stacked HBT Class-F−1 High-Gain Power Amplifier in 130-nm SiGe-BiCMOS
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Ka-Band SiGe BiCMOS Quasi-F−1 Power Amplifier Using a Parasitic Capacitance Cancellation Technique †;Journal of Low Power Electronics and Applications;2023-03-24
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