A Novel High Photon Detection Efficiency Silicon Photomultiplier With Shallow Junction in 0.35 $\mu$ m CMOS-Reference-Cited by-同舟云学术

A Novel High Photon Detection Efficiency Silicon Photomultiplier With Shallow Junction in 0.35 $\mu$ m CMOS

Published:2019-09 Issue:9 Volume:40 Page:1471-1474
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

D'Ascenzo Nicola¹^ORCID,Antonecchia Emanuele¹^ORCID,Brensing Andreas²,Brockherde Werner³^ORCID,Dreiner Stefan³,Ewering Johannes³,Kuhn Marvin¹,Schmidt Andrei³^ORCID,vom Stein Peter³,Wang Weidong⁴,Zhou Zhenliang¹^ORCID,Xie Qingguo¹

Affiliation:

1. School of Life Science and Technology, Huazhong University of Science and Technology, Wuhan, China

2. Department of Biomedical Engineering, Rhein-Main University of Applied Sciences, Wiesbaden, Germany

3. IMS Fraunhofer, Duisburg, Germany

4. Key Laboratory of Biomedical Engineering and Translational Medicine, Ministry of Industry and Information Technology, Beijing, China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Hubei Province

National Key Scientific Instrument and Equipment Development Program of China

National Key Scientific Instrument and Equipment Development Projects of China

National Key Research and Development Program of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/8811651/08765242.pdf?arnumber=8765242

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