Schottky Barrier Diode Based on Ge-Doped $\alpha-\text{Ga}_{2}\mathrm{O}_{3}$ Films Grown by Mist-CVD Method
Author:
Affiliation:
1. Kyoto University,Department of Material Chemistry,Kyoto,Japan
2. Ritsumeikan University,Research Organization of Science and Technology,Shiga,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10339391/10339529/10339549.pdf?arnumber=10339549
Reference15 articles.
1. Valence band ordering in β-Ga2O3studied by polarized transmittance and reflectance spectroscopy
2. Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy
3. Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
4. Band gap of corundumlike α−Ga2O3 determined by absorption and ellipsometry
5. Heteroepitaxy of Corundum-Structured Thin Films on Substrates by Ultrasonic Mist Chemical Vapor Deposition;Shinohara;Jpn. J. Appl. Phys.,2008
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1. Structural characterization of threading dislocation in α-Ga2O3 thin films on c- and m-plane sapphire substrates;Journal of Applied Physics;2024-07-10
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