CMOS-Fabricated Ring Surface Ion Trap with TSV Integration-Reference-Cited by-同舟云学术

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CMOS-Fabricated Ring Surface Ion Trap with TSV Integration

Published:2023-12-09 Issue: Volume:6 Page:1-4
ISSN:
Container-title:2023 International Electron Devices Meeting (IEDM)
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Author:

Zhao Peng¹,Lim Yu Dian²,Li Hongyu¹,Likforman Jean-Pierre³,Guidoni Luca³,Desormeaux Lilay Gros³,Tan Chuan Seng¹

Affiliation:

1. Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR),Singapore,117685

2. Nanyang Technological University,School of Electrical and Electronic Engineering,Singapore,639798

3. Université Paris Cité,Laboratoire Matériaux et Phénomènes Quantiques,Paris,France

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10413659/10413660/10413875.pdf?arnumber=10413875

Reference17 articles.

1. Trapped-ion quantum computing: Progress and challenges

2. Precision measurement of the branching fractions of the5pP1/22state inSr+88with a single ion in a microfabricated surface trap

3. Integrated optical multi-ion quantum logic

4. Development of Grating for the Optical Addressing of Sr⁺ Ions With Data Analysis Techniques

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Three-dimensional modeling of near-field beam profiles from grating couplers using a deep neural network;Applied Optics;2024-09-06

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