Fluorine Anion-Doped Ultra-Thin InGaO Transistors Overcoming Mobility-Stability Trade-off-Reference-Cited by-同舟云学术

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Fluorine Anion-Doped Ultra-Thin InGaO Transistors Overcoming Mobility-Stability Trade-off

Published:2023-12-09 Issue: Volume: Page:1-4
ISSN:
Container-title:2023 International Electron Devices Meeting (IEDM)
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Author:

Zhang J.¹,Zhang Z.¹,Dou H.²,Lin Z.¹,Xu K.²,Yang W.³,Zhang X.²,Wang H.²,Ye P. D.¹

Affiliation:

1. Purdue University,School of Electrical and Computer Engineering,West Lafayette,IN,USA

2. Purdue University,School of Materials Engineering,West Lafayette,IN,USA

3. Xiamen University,Department of Microelectronics and Integrated Circuit,Xiamen,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10413659/10413660/10413810.pdf?arnumber=10413810

Reference26 articles.

1. (Adv. Mater. 27/2023)

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Highly Scaled BEOL-Compatible Thin Film Transistors With Ultrathin Atomic Layer Deposited Indium–Tin–Zinc–Oxide Channel;IEEE Transactions on Electron Devices;2024-06

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