Modeling the Performance and Reliability of Two-Dimensional Semiconductor Transistors-Reference-Cited by-同舟云学术

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Modeling the Performance and Reliability of Two-Dimensional Semiconductor Transistors

Published:2023-12-09 Issue: Volume: Page:1-4
ISSN:
Container-title:2023 International Electron Devices Meeting (IEDM)
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Short-container-title:

Author:

Knobloch T.¹,Waldhoer D.¹,Davoudi M. R.¹,Karl A.¹,Khakbaz P.¹,Matzinger M.¹,Zhang Y.²,Smithe K. K. H.³,Nazir A.⁴,Liu C.⁴,Illarionov Y. Y.⁵,Pop E.³,Peng H.²,Kaczer B.⁶,Grasser T.¹

Affiliation:

1. Institute for Microelectronics, TU Wien,Vienna,Austria,1040

2. Peking University (PKU),Beijing,China

3. Stanford University,CA,USA,94305

4. Huawei Technologies R&D,Leuven,Belgium

5. Southern University of Science and Technology,Shenzhen,China

6. Imec,Heverlee,Belgium,3001

Funder

European Research Council

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10413659/10413660/10413824.pdf?arnumber=10413824

Reference42 articles.

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1. Fluoride dielectrics for 2D transistors;Nature Nanotechnology;2024-07

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