Transfer-Substrate Process for InP RTD-Oscillator Characterization
Author:
Affiliation:
1. University of Duisburg-Essen,Faculty of Engineering,Dept. of Components for High-Frequency Electronics (BHE),Duisburg,Germany
2. University of Duisburg-Essen, Faculty of Engineering,Chair of Communication Systems (NTS),Duisburg,Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9832436/9832437/09832457.pdf?arnumber=9832457
Reference16 articles.
1. Analysis of Substrate Mounted Dielectric Lenses for Silicon-based THz Sources
2. Scalable high-current density RTDs with low series resistance
3. Room-temperature deposition of SiNx using ECR-PECVD for semiconductor microelectronics in lift-off technique
4. Terahertz spectroscopy and imaging - Modern techniques and applications
5. Debye function expansions of empirical models of complex permittivity for use in FDTD solutions
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