Growth of InN for heterojunction field effect transistor applications by plasma enhanced MBE-Reference-Cited by-同舟云学术

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Growth of InN for heterojunction field effect transistor applications by plasma enhanced MBE

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Container-title:Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122)
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Author:

Schaff W.J.,Hai Lu ,Jeonghyun Hwang ,Hong Wu

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/7236/19520/00902542.pdf?arnumber=902542

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. First-principles calculations of elastic and thermodynamic properties under hydrostatic pressure of cubic InNxP1-x ternary alloys;Chinese Journal of Physics;2019-06

2. DC and RF performance of an In0.1Ga0.9N/InN high electron mobility transistor;physica status solidi (c);2011-06-07

3. Surface Electronic Properties of InN and Related Alloys;Indium Nitride and Related Alloys;2009-08-18

4. Low-field electron mobility in wurtzite InN;Applied Physics Letters;2006-01-16

5. Indium nitride (InN): A review on growth, characterization, and properties;Journal of Applied Physics;2003-09

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