New concepts and preliminary results for SiC bipolar transistors: ZnSiN/sub 2/ and ZnGeN/sub 2/ heterojunction emitters-Reference-Cited by-同舟云学术

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New concepts and preliminary results for SiC bipolar transistors: ZnSiN/sub 2/ and ZnGeN/sub 2/ heterojunction emitters

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Container-title:Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122)
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Author:

Osinsky A.,Fuflyigin V.,Zhu L.D.,Goulakov A.B.,Graff J.W.,Schubert E.F.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/7236/19520/00902534.pdf?arnumber=902534

Cited by 37 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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4. Trends in opto-electronic properties of MgxZn1-xSnN2 using first principles methods;Materials Chemistry and Physics;2023-01

5. Electron transport properties in degenerate magnesium tin oxynitride (Mg_1−xSn_1+xN_2−2yO_2y) with average wurtzite structure;Journal of Applied Physics;2022-02-21

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