A 2.4GHz SOI CMOS Power Amplifier for New Generation Bluetooth Application
Author:
Affiliation:
1. College of Electronics & Information Engineering Shanghai University of Electric Power,Shanghai,P.R.China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9973811/9974158/09974559.pdf?arnumber=9974559
Reference7 articles.
1. Three Stage Class AB Power Amplifier in 90 nm CMOS Process for IoT Applications
2. High efficiency multi-mode outphasing RF power amplifier in 45 nm CMOS;banerjee;Proc Eur Solid-State Circuits Conf (ESSCIRC),2015
3. A 27-mW W-Band Radar Receiver With Effective TX Leakage Suppression in 28-nm FD-SOI CMOS
4. A Compact 28-nm FD-SOI CMOS 76–81 GHz Automotive Band Receiver Path with Accurate 0.2° Phase Control Resolution
5. A wide range 60 GHz VCO using back-gate controlled varactor in 22 nm FDSOI technology
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1. A 46% PAE, 2.4-GHz Two-Stage Class E Power Amplifier Utilizing CMOS 0.13-µm Technology;IETE Journal of Research;2024-06-27
2. A 2.4 GHz High Efficient Power Amplifier Using Harmonic Suppression Method for RF Transceiver Applications;2023 Asia Meeting on Environment and Electrical Engineering (EEE-AM);2023-11-13
3. Comparative Analysis of Design Parameters for Modern Radio Frequency Complementary Metal Oxide Semiconductor Ultra-Low Power Amplifier Architecture Trends;IEEC 2023;2023-09-20
4. A 2.4 GHz Fully Integrated, 50-Ohm Matched Power Amplifier for Bluetooth Application;2023 International Symposium on Ultrafast Phenomena and Terahertz Waves (ISUPTW);2023-09-08
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