<inline-formula> <tex-math notation="LaTeX">${L}{\text {1}}_{\text {0}}$ </tex-math></inline-formula>-Ordered MnAl Thin Films With High Perpendicular Magnetic Anisotropy Using TiN Underlayers on Si Substrates-Reference-Cited by-同舟云学术

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${L}{\text {1}}_{\text {0}}$ -Ordered MnAl Thin Films With High Perpendicular Magnetic Anisotropy Using TiN Underlayers on Si Substrates

Published:2015-11 Issue:11 Volume:51 Page:1-4
ISSN:0018-9464
Container-title:IEEE Transactions on Magnetics
language:
Short-container-title:IEEE Trans. Magn.

Author:

Huang Efrem Y.,Kryder Mark H.

Funder

Data Storage Systems Center

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/20/7305868/07119575.pdf?arnumber=7119575

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Perpendicular magnetic anisotropy in the multilayer fabricated by alternate sputtering of Fe3O4/Cr and post-annealing;Journal of Magnetism and Magnetic Materials;2024-05

2. Perpendicularly magnetized ferromagnetism in Mn/Al bilayer thin films on Si substrates induced by temperature dependent ion beam mixing;Physica Scripta;2021-07-15

3. Structural characterization and magnetic properties of L10-MnAl films grown on different underlayers by molecular beam epitaxy;Journal of Crystal Growth;2018-03

4. Rare-earth-free high energy product manganese-based magnetic materials;Nanoscale;2018

5. Enhanced saturation magnetization in perpendicular L10–MnAl films upon low substitution of Mn by 3d transition metals;Journal of Applied Physics;2016-12-28

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