Comparison of SiC and eGaN devices in a 6.78 MHz 2.2 kW resonant inverter for wireless power transfer-Reference-Cited by-同舟云学术

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Comparison of SiC and eGaN devices in a 6.78 MHz 2.2 kW resonant inverter for wireless power transfer

Published:2016-09 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE Energy Conversion Congress and Exposition (ECCE)
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Author:

Choi Jungwon,Tsukiyama Daisuke,Rivas Juan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7835398/7854636/07854938.pdf?arnumber=7854938

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Comparative Review on the Development of High-Frequency and High-Power Capacitive Power Transfer Technology;2024 10th International Conference on Power Electronics Systems and Applications (PESA);2024-06-05

2. 5-MHz Operation of a DC 565-V SiC-MOSFET Half-Bridge Inverter by Reducing Thermal Resistance of General-Purpose Gate Drivers;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

3. A 3 kW 3.39 MHz DC/DC Inductive Power Transfer System with Power Combining Converters;2023 IEEE Wireless Power Technology Conference and Expo (WPTCE);2023-06-04

4. Quantum Power Electronics: From Theory to Implementation;Inventions;2023-05-16

5. A Comprehensive Review on Wireless Power Transfer Systems for Charging Portable Electronics;Eng;2023-04-03

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