Aging precursors and degradation effects of SiC-MOSFET modules under highly accelerated power cycling conditions

Author:

Luo Haoze,Iannuzzo Francesco,Blaabjerg Frede,Turnaturi Marcello,Mattiuzzo Emilio

Publisher

IEEE

Cited by 38 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

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