Novel monolithically integrated bidirectional GaN HEMT-Reference-Cited by-同舟云学术

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Novel monolithically integrated bidirectional GaN HEMT

Published:2018-09 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE Energy Conversion Congress and Exposition (ECCE)
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Author:

Kuring Carsten,Hilt Oliver,Bocker Jan,Wolf Mihaela,Dieckerhoff Sibylle,Wurfl Joachim

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8537478/8557346/08557741.pdf?arnumber=8557741

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A CSI-Fed PMSM Drive System With Single-Stage Operation for Extended Constant-Torque Range;IEEE Transactions on Industrial Electronics;2024-09

2. High-Voltage (>1.2 kV) AlGaN/GaN Monolithic Bidirectional HEMTs With Low On-Resistance (2.54 mΩ ⋅ cm²);IEEE Transactions on Electron Devices;2024-01

3. Passive Component Optimization for Current-Source-Inverters;IEEE Transactions on Industry Applications;2023-09

4. A Novel Test Method for Switching Loss Measurement of Reverse-Blocking Semiconductor Switches in Current-Source Inverters;2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia);2023-05-22

5. Gallium Nitride Power Devices: A State of the Art Review;IEEE Access;2023

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