High speed dV/dt control technology for SiC power module for EV/HEV inverters-Reference-Cited by-同舟云学术

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High speed dV/dt control technology for SiC power module for EV/HEV inverters

Published:2017-10 Issue: Volume: Page:
ISSN:
Container-title:2017 IEEE Energy Conversion Congress and Exposition (ECCE)
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Author:

Shimomura Taku,Ikari Takayuki,Okubo Akinori,Yamada Ryusei,Numakura Keiichiro,Hayashi Tetsuya

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8085404/8095743/08096915.pdf?arnumber=8096915

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Integrated Gate Driver Based on SiC MOSFETs Adaptive Multi-Level Control Technique;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-04

2. Investigate of Gate Driver Loop Impedance on Switching Transients of Both Power Device Side and Gate Driver Side;2022 IEEE International Power Electronics and Application Conference and Exposition (PEAC);2022-11-04

3. A 20MHz 4A gate driver with 5.5 to 24V output drive voltage for wide bandgap FETs;IEICE Electronics Express;2022-08-25

4. Special Focus on HEV and EV Applications: Activities of Automotive Industries Applying SiC Devices for Automotive Applications;Wide Bandgap Semiconductors for Power Electronics;2021-10-29

5. Dynamic dv/dt Control Strategy of SiC MOSFET for Switching Loss Reduction in the Operational Power Range;IEEE Transactions on Power Electronics;2021

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