3-Level power converter with high-voltage SiC-PiN diode and hard-gate-driving of IEGT for future high-voltage power conversion systems-Reference-Cited by-同舟云学术

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3-Level power converter with high-voltage SiC-PiN diode and hard-gate-driving of IEGT for future high-voltage power conversion systems

Published:2010-02 Issue: Volume: Page:
ISSN:
Container-title:2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)
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Author:

Takao Kazuto,Tanaka Yasunori,Sung Kyungmin,Wada Keiji,Shinohe Takashi,Kanai Takeo,Ohashi Hiromichi

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5426413/5433335/05433364.pdf?arnumber=5433364

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Extremely High Efficient Three-Level Active Neutral-Point-Clamped Converter Comprising SiC and Si Hybrid Power Stages;IEEE Transactions on Power Electronics;2018-10

2. Recent progress of SiC power devices and applications;IEEJ Transactions on Electrical and Electronic Engineering;2013-07-31

3. Accurate Power Circuit Loss Estimation Method for Power Converters With Si-IGBT and SiC-Diode Hybrid Pair;IEEE Transactions on Electron Devices;2013-02

4. Design of Wiring Structure by Considering Bus Bar Inductance;IEEJ Transactions on Industry Applications;2012

5. High-frequency switching high-power converter with SiC-PiN diodes and Si-IEGTs;2010 IEEE Energy Conversion Congress and Exposition;2010-09

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