Optimized IGBT Turn-Off Switching Performance Using the Full Device Safe Operating Area-Reference-Cited by-同舟云学术

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Optimized IGBT Turn-Off Switching Performance Using the Full Device Safe Operating Area

Published:2019-03 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE Applied Power Electronics Conference and Exposition (APEC)
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Author:

Ludecke Christoph,Engelmann Georges,De Doncker Rik W.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8716496/8721765/08722169.pdf?arnumber=8722169

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Switching and Frequency Response Assessment of Photovoltaic Drivers and Their Potential for Different Applications;Micromachines;2024-06-27

2. A Refinement Multilevel Turn-off Method for Dynamic Latch-up and Tail Current Suppression in DC Breaker Ultra-High Current Switch Applications;IEEE Transactions on Industrial Electronics;2024-03

3. High dv/dt Testing of Coil Winding Insulation Systems for Wide-Bandgap Applications;2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia);2023-05-22

4. Parameter Selection of Fast-Switching Current Mirror for Active Gate Driver of High-Power Devices;2023 IEEE 6th International Electrical and Energy Conference (CIEEC);2023-05-12

5. Wireless Control of Active Gate Drivers for Silicon Carbide Power MOSFETs;IEEE Open Journal of the Industrial Electronics Society;2023

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