Temperature-dependent turn-on loss analysis for GaN HFETs-Reference-Cited by-同舟云学术

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Temperature-dependent turn-on loss analysis for GaN HFETs

Published:2016-03 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE Applied Power Electronics Conference and Exposition (APEC)
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Author:

Jones Edward A.,Wang Fred,Costinett Daniel,Zhang Zheyu,Guo Ben

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7465913/7467833/07467994.pdf?arnumber=7467994

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaluation of GaN HEMT dv/dt Immunity and dv/dt Induced False Turn-On Energy Loss;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

2. Hard-Switching Loss Calculation Model For Fast-Switching GaN HEMT in Half-Bridge Circuit;IECON 2023- 49th Annual Conference of the IEEE Industrial Electronics Society;2023-10-16

3. Switching a eMode GaN HEMT under conditions of an inverter module for electrical vehicles (EV);2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04

4. Review of Pulse Test Setup for the Switching Characterization of GaN Power Devices;IEEE Transactions on Electron Devices;2022-06

5. Efficiency Improvement With Off-Time Discrete Control for GaN-Based MHz-Operated Discontinuous Current Mode Grid-Tied Inverter;IEEE Transactions on Industry Applications;2021-09

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