Impact of the Case Temperature on the Reliability of SiC MOSFETs Under Repetitive Short Circuit Tests
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8716496/8721765/08722300.pdf?arnumber=8722300
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optimization of a Bidirectional Boost Converter for Nanogrid Applications;2023 IEEE Industry Applications Society Annual Meeting (IAS);2023-10-29
2. A Modeling Method of SiC-MOSFET Short-circuit Failure Based on COMSOL Multiphysics and Simulink Co-simulation;2023 IEEE 6th International Electrical and Energy Conference (CIEEC);2023-05-12
3. 1200-V SiC MOSFET Short-Circuit Ruggedness Evaluation and Methods to Improve Withstand Time;IEEE Journal of Emerging and Selected Topics in Power Electronics;2022-10
4. Gate Bias Dependence of V TH Degradation in Planar and Trench SiC MOSFETs Under Repetitive Short Circuit Tests;IEEE Transactions on Electron Devices;2022-05
5. Aging Mechanisms and Accelerated Lifetime Tests for SiC MOSFETs: An Overview;IEEE Journal of Emerging and Selected Topics in Power Electronics;2022-02
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