High-temperature SOI-based gate driver IC for WBG power switches-Reference-Cited by-同舟云学术

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High-temperature SOI-based gate driver IC for WBG power switches

Published:2013-03 Issue: Volume: Page:
ISSN:
Container-title:2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)
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Author:

Greenwell R. L.,McCue B. M.,Tolbert L. M.,Blalock B. J.,Islam S. K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6516132/6520164/06520535.pdf?arnumber=6520535

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and experiments of isolated gate driver using discrete devices for silicon carbide MOSFET;IET Power Electronics;2022-08-18

2. Technical Review of Traction Drive Systems for Light Railways;Energies;2022-04-27

3. Wide Bandgap Semiconductor-Based Converters for EV and HEV Magnetically Coupled Resonant Wireless Power Transfer;2021 Sixteenth International Conference on Ecological Vehicles and Renewable Energies (EVER);2021-05-05

4. Gate Drivers Based on High-Voltage Charge Storing (HVCS);Highly Integrated Gate Drivers for Si and GaN Power Transistors;2021

5. Fundamentals;Highly Integrated Gate Drivers for Si and GaN Power Transistors;2021

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