Analysis of the Factors Limiting the RF Breakdown Voltage in SiGe HBTs for Wi-Fi PA Applications-Reference-Cited by-同舟云学术

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Analysis of the Factors Limiting the RF Breakdown Voltage in SiGe HBTs for Wi-Fi PA Applications

Published:2021-12-05 Issue: Volume: Page:
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Container-title:2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

Raman Ajay,Jain Vibhor,Veeramani Elanchezhian,Lim Beng Woon,Raghunathan Uppili S.,Ngu Yves,Joseph Alvin

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9682201/9682202/09682457.pdf?arnumber=9682457

Reference14 articles.

1. Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Assessing DC and RF Reliability of SiGe HBTs Stress-Engineered Using Dummy BEOL Layers;IEEE Transactions on Electron Devices;2024

2. Simulation of DC Safe Operating Area and RF Breakdown in SiGe PA HBT;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

3. Impact of Layout Parasitics and Thermal Coupling on PA performance and ruggedness in SiGe HBTs;2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2022-10-16

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