An Automated Approach to Power Amplifier Design Demonstrated with a SiGe Process at 140 GHz-Reference-Cited by-同舟云学术

An Automated Approach to Power Amplifier Design Demonstrated with a SiGe Process at 140 GHz

Published:2023-09-11 Issue: Volume: Page:
ISSN:
Container-title:ESSCIRC 2023- IEEE 49th European Solid State Circuits Conference (ESSCIRC)
language:
Short-container-title:

Author:

O’Malley Everett¹,Buckwalter James F.¹

Affiliation:

1. University of California Santa Barbara,Santa Barbara,CA,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10268677/10268683/10268806.pdf?arnumber=10268806

Reference6 articles.

1. A 110-to-130GHz SiGe BiCMOS Doherty Power Amplifier With Slotline-Based Power-Combining Technique Achieving >22 dBm Saturated Output Power and >10 Power Back-off Efficiency;li;IEEE International Solid-State Circuits Conference ISSCC 2022,2022

2. A D-Band SiGe Power Amplifier Using a Four-Way Coupled-Line Wilkinson Combiner

3. A 109-137 GHz power amplifier in SiGe BiCMOS with 16.5 dBm output power and 12.8 PAE;kucharski;2017 European Microwave Conference (EuMC),2017

4. D-Band SiGe BiCMOS Power Amplifier With 16.8dBm P₁dB and 17.1% PAE Enhanced by Current-Clamping in Multiple Common-Base Stages

5. High Efficiency D-Band Multiway Power Combined Amplifiers With 17.5–19-dBm Psat and 14.2–12.1% Peak PAE in 45-nm CMOS RFSOI

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Automated mmWave Power Amplifier Design Flow and a 28-GHz Design Example in 45-nm CMOS SOI;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

2. Record D-Band Performance From Prematched N-Polar GaN-on-Sapphire Transistor With 2 W/mm and 10.6% PAE at 132 GHz;IEEE Microwave and Wireless Technology Letters;2024-04