A 0.0106 mm<sup>2</sup> 8nW Resistor-Less BJT Bandgap Reference in 65nm-Reference-Cited by-同舟云学术

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A 0.0106 mm² 8nW Resistor-Less BJT Bandgap Reference in 65nm

Published:2023-09-11 Issue: Volume: Page:
ISSN:
Container-title:ESSCIRC 2023- IEEE 49th European Solid State Circuits Conference (ESSCIRC)
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Author:

Feldman Asaf¹,Shor Joseph¹

Affiliation:

1. Bar Ilan University Ramat Gan,Faculty of Electrical Engineering,Israel

Funder

Israel Science Foundation

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10268677/10268683/10268740.pdf?arnumber=10268740

Reference7 articles.

1. 0.45v and 18pA/MHz MCU SOC with advanced Adaptive Dynamic Voltage Control (ADVC);zangi;2017 IEEE SOI-3D-Subthreshold Microelectron Unified Conf S3S 2017,2018

2. A 0.5-V Supply, 36 nW Bandgap Reference With 42 ppm/°C Average Temperature Coefficient Within −40 °C to 120 °C

3. Switched-Capacitor Bandgap Voltage Reference for IoT Applications

4. A Resistor-Less nW-Level Bandgap Reference With Fine-Grained Voltage and Temperature Coefficient Trims

5. 5.4 A 32nW bandgap reference voltage operational from 0.5V supply for ultra-low power systems

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A -184 Db Psrr and 2.47 Μvrms Noise Self Biased Bandgap Reference Based on Fvf Structure;2024

2. An Energy-Efficient Inverter-Based Voltage Reference Scheme with Wide Output Range Using Correlated Level Shifting Technique;Electronics;2023-12-14

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