Delay analysis of BiNMOS driver including high current transients
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/16/3498/00123482.pdf?arnumber=123482
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Comparison of Gummel-Poon and quasi-saturation models in BiCMOS switching;International Journal of Electronics;1998-04
2. BiCMOS Devices;Semiconductor Device Physics and Simulation;1998
3. Circuit analysis of BiCMOS gate delay;International Journal of Electronics;1997-07
4. Modelling the BiCMOS switching delay including radiation effects;IEE Proceedings - Circuits, Devices and Systems;1997
5. Degradation of bipolar junction transistors under dynamic high current stress and biased in open-collector condition;Solid-State Electronics;1994-02
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