L-Shaped Double Gate Bipolar Impact Ionization MOSFET Based Energy Efficient Leaky Integrate and Fire Neuron for Spiking Neural Network-Reference-Cited by-同舟云学术

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L-Shaped Double Gate Bipolar Impact Ionization MOSFET Based Energy Efficient Leaky Integrate and Fire Neuron for Spiking Neural Network

Published:2023 Issue: Volume:22 Page:673-678
ISSN:1536-125X
Container-title:IEEE Transactions on Nanotechnology
language:
Short-container-title:IEEE Trans. Nanotechnology

Author:

Sarkhel Saheli¹^ORCID,Kumari Tripty²^ORCID,Saha Priyanka³^ORCID

Affiliation:

1. Department of Electronics and Communication Engineering, NSEC, Garia, Kolkata, India

2. Department of Electrical Engineering, IIT, Patna, Bihar, India

3. Department of Electronics and Communication Engineering, C.V. Raman Global University, Bhubaneswar, India

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Science Applications

Link

http://xplorestaging.ieee.org/ielx7/7729/10016255/10274130.pdf?arnumber=10274130

Reference22 articles.

1. A CMOS Compatible Bulk FinFET-Based Ultra Low Energy Leaky Integrate and Fire Neuron for Spiking Neural Networks

2. Ultra-Low Energy LIF Neuron Using Si NIPIN Diode for Spiking Neural Networks

3. Simulation-Based Ultralow Energy and High-Speed LIF Neuron Using Silicon Bipolar Impact Ionization MOSFET for Spiking Neural Networks

4. A Highly Scalable Junctionless FET Leaky Integrate-and-Fire Neuron for Spiking Neural Networks

5. Mimicry of Excitatory and Inhibitory Artificial Neuron With Leaky Integrate-and-Fire Function by a Single MOSFET

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spiking Neural Network Integrated with Impact Ionization Field‐Effect Transistor Neuron and a Ferroelectric Field‐Effect Transistor Synapse;Advanced Materials;2024-09-05

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