Trapping Depth and Transition Probability of Four-Level Random Telegraph Noise in a Gate-All-Around Poly-Si Nanowire Transistor
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Published:2020
Issue:
Volume:19
Page:338-343
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ISSN:1536-125X
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Container-title:IEEE Transactions on Nanotechnology
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language:
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Short-container-title:IEEE Trans. Nanotechnology
Author:
Chang You-TaiORCID,
Tsai Yueh-Lin,
Peng Kang-Ping,
Su Chun-Jung,
Li Pei-WenORCID,
Lin Horng-ChihORCID
Funder
Ministry of Science and Technology, Taiwan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Computer Science Applications