Control of Charge Transport Properties in Molybdenum Diselenide Field-Effect Transistors for Enhanced Noise-Margin and Inverter Characteristics
Author:
Affiliation:
1. Department of Electronic Engineering, Gachon University, Seongnam, Korea
2. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Korea
Funder
National Research Foundation of Korea
Gachon University Research Fund of 2020
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Computer Science Applications
Link
http://xplorestaging.ieee.org/ielx7/7729/9682520/09789590.pdf?arnumber=9789590
Reference33 articles.
1. The role of chalcogen vacancies for atomic defect emission in MoS2
2. A homogeneous p–n junction diode by selective doping of few layer MoSe2 using ultraviolet ozone for high-performance photovoltaic devices
3. Tailoring Vacancies Far Beyond Intrinsic Levels Changes the Carrier Type and Optical Response in Monolayer MoSe2−x Crystals
4. Self-powered photodetector based on SnSe2/MoSe2 heterostructure
5. Wafer-Scale Highly Oriented Monolayer MoS2 with Large Domain Sizes
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